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s mhop microelectronics c orp. a STM8360T symbolv ds v gs i dm e as w a p d c 2 -55 to 150 i d units parameter 40 6.6 33 vv 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics mj product summary (n-channel) v dss i d r ds(on) (m ) max 40v 6.6a 45 @ vgs=4.5v 29 @ vgs=10v dual enhancement mode field effect transistor (n and p chann el) absolute maximum ratings ( t c =25 c unless otherwise noted ) n-channel drain current-continuous a -pulsed b a sigle pulse avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg www.samhop.com.tw nov,21,2008 1 details are subject to change without notice. 62.5 thermal resistance, junction-to-ambient r ja a t c =25 c product summary (p-channel) v dss i d r ds(on) (m ) max -40v -5.5a 65 @ vgs=-4.5v 42 @ vgs=-10v -40 -5.5 -31 20 p-channel t c =70 c a 5.3 -4.4 1.28 w t c =70 c c/w 19 16 ver 1.0 s o-8 1 4 3 2 1 d 2 d 2 d 1 d 1 g 2 s 2 g 1 s 1 5 6 7 8 green product
4 symbol min typ max units bv dss 40 v 1 i gss 100 na v gs(th) 1.0 v 23 g fs 17 s v sd c iss 780 pf c oss 60 pf c rss 50 pf q g 14 nc 14 nc q gs 18.5 nc q gd 20 t d(on) 14 ns t r 1.8 ns t d(off) 3.9 ns t f ns gate-drain charge v ds =20v,v gs =0v switching characteristics gate-source charge v dd =20v i d =1a v gs =10v r gen =3.3 ohm total gate charge rise time turn-off delay time v ds =20v,i d =6.6a,v gs =10v fall time turn-on delay time m ohm v gs =10v , i d =6.6a v ds =5v , i d =6.6a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current n-channel electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 3 v gs =4.5v , i d =5.3a 29 33 45 m ohm c f=1.0mhz c v ds =20v,i d =6.6a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =1.7a 0.77 1.2 v STM8360T www.samhop.com.tw nov,21,2008 2 nc v ds =20v,i d =6.6a,v gs =4.5v 6.9 1.5 b i s maximum continuous drain-source diode forward current a 1.7 ver 1.0
symbol min typ max units bv dss -40 v -1 i gss 100 na v gs(th) -1.0 v 33 g fs 12 s v sd c iss 980 pf c oss 135 pf c rss 90 pf q g 12 nc 17 nc q gs 82 nc q gd 35 t d(on) 20.7 ns t r 1.5 ns t d(off) 6.2 ns t f ns gate-drain charge v ds =-20v,v gs =0v switching characteristics gate-source charge v dd =-20v i d =-1a v gs =-10v r gen =3 ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-5.5a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-5.5a v ds =-5v , i d =-5.5a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =-250ua v ds =-32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current p-channel electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =-250ua reverse transfer capacitance on characteristics -3 v gs =-4.5v , i d =-4.4a 42 48 65 m ohm c f=1.0mhz c v ds =-20v,i d =-5.5a, v gs =-10v drain-source diode characteristics and maximum ratings v gs =0v,i s =-1.7a -0.76 -1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v,v gs =10v.(see figure13) _ _ STM8360T www.samhop.com.tw nov,21,2008 3 nc v ds =-20v,i d =-5.5a,v gs =-4.5v 11 _ -1.7 b i s maximum continuous drain-source diode forward current a -1.7 ver 1.0
STM8360T www.samhop.com.tw nov,21,2008 4 i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature n-channel 40 32 24 16 80 0 0.5 1 1.5 2 2.5 3 v g s =2.5v v g s =3v v g s =3.5v v g s =4v v g s =4.5v v g s =10v 20 12 8 4 0 0 0.8 1.6 2.4 3.2 4.0 4.8 16 t j =1 25 c -55 c c 25 60 48 36 24 12 0 8 16 24 32 40 1 v g s =10v v g s =4.5v 72 t j ( c ) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 v g s =10v i d =6.6a 150 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =250ua -50 -25 0 25 50 75 100 125 150 0.95 0.90 0.85 i d =250ua 1.00 1.05 1.10 1.15 ver 1.0 v g s =4.5v i d =5.3a
STM8360T www.samhop.com.tw nov,21,2008 5 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 56 42 0 2 4 6 8 10 0 i d =6.6a 28 14 84 70 125 c 25 c 75 c 20.0 10.0 1.0 0 0.4 0.8 1.2 1.6 2.0 5.0 1200 1000 800 600 400 200 0 c is s c os s c rs s 10 86 4 2 0 0 2 4 6 8 10 12 14 16 v ds =20v i d =6.6a ver 1.0 0 5 10 15 20 25 30 125 c 25 c 75 c 1 10 100 60 100 10 1 300 6 v ds =20v ,id=1a v g s =10v tr td(off) tf td(on) 0.1 1 10 40 10 1 0.1 100 v gs =10v single pulse t a =25 c r ds ( o n ) l i mi t 1 m s 100u s 10ms 10u s dc
STM8360T www.samhop.com.tw nov,21,2008 6 t p v ( br )d ss i a s r g i a s 0.0 1 t p d .u .t l v d s + - v d d d r ive r a 15v 20v f igure 13a. f igure 13b. u ncl am p e d s in d u ct i ve t e t ci r c u i t o f r m w ave s u ncl am p e d in d u ct i ve 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve normalized transient thermal resistance p dm t 1 t 2 1. r / j a (t)=r (t) * r / j a 2. r / j a =s ee datas heet 3. t j m- t a = p dm * r / j a (t) 4. duty c ycle, d=t 1 /t 2 single pulse 0.5 0.2 0.1 0.05 0.02 0.01 ver 1.0
STM8360T www.samhop.com.tw nov,21,2008 7 -i d , drain current(a) -v ds , drain-to-source voltage(v) figure 1. output characteristics -v gs , gate-to-source voltage(v) figure 2. transfer characteristics -i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized -i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature p-channel t j ( c ) ver 1.0 2520 15 10 50 0.5 1 1.5 2 2.5 3 v g s =-3v v g s =-4v v g s =-4.5v v g s =-8v v g s =-10v 0 -55 c 25 c 20 12 8 4 0 0 0.8 1.6 2.4 3.2 4.0 4.8 t j=125 c 16 120100 8060 40 20 0 5 10 15 20 25 1 v g s =-10v v g s =-4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 150 100 125 v g s =-4.5v i d =-4.4a v g s =-10v i d =-5.5a 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =-250ua -50 -25 0 25 50 75 100 125 150 1.15 1.10 1.05 1.00 0.95 0.90 0.85 i d =-250ua
STM8360T www.samhop.com.tw nov,21,2008 8 r ds(on) (m ) -v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage -is, source-drain current(a) -v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) -v ds , drain-to-source voltage(v) figure 9. capacitance -v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics -i d , drain current(a) -v ds , drain-source voltage(v) figure 12. maximum safe operating area ver 1.0 120100 8060 40 20 0 2 4 6 8 10 0 25 c i d =-5.5a 1200 1000 800600 400 200 0 ciss coss crss 10 86 4 2 0 0 3 6 9 12 15 18 21 24 v ds =-20v i d =-5.5a 0.1 1 10 40 10 1 0.1 100 1m s r d s (o n) l imit 100us 10 m s 1 10 100 100 10 1 1000 vds=-20v,id=-1a vgs=-10v 20.010.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 25 c 75 c 5.0 125 c 3 td(on) tr td(off ) tf 125 c 75 c 0 5 10 15 20 25 30 1 0 us v gs =-10v single pulse t a =25 c dc
t p v ( br )d ss i a s r g i a s 0.0 1 t p d .u .t l v d s + - v d d d r ive r a 15v 20v f igure 13a. f igure 13b. u ncl am p e d s in d u ct i ve t e t ci r c u i t o f r m w ave s u ncl am p e d in d u ct i ve STM8360T www.samhop.com.tw nov,21,2008 9 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 1 0 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve single pulse p dm t 1 t 2 1. r thja (t)=r (t) * r ja 2. r ja =see datasheet 3. t jm- t a = p dm * r ja (t) 4. duty cycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05 normalized transient thermal resistance ver 1.0
STM8360T www.samhop.com.tw nov,21,2008 10 package outline dimensions so-8 s y mb ols min min 0.053 0.004 0.189 0.150 0.228 0.016 0 1.35 0.10 4.80 3.81 5.79 0.41 0 max max 0.069 0.010 0.196 0.157 0.244 0.050 8 1.75 0.25 4.98 3.99 6.20 1.27 8 millime t e r s inc he s a a1 d eh l 1 e b h e l a1 a c d 0.05 typ. 0.016 typ. 0.008 typ. 0.015x45 ver 1.0 notes y so-8 package weight y 0.083g
STM8360T www.samhop.com.tw nov,21,2008 11 so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.50 5.25 2.10 ? 1.5 (min) ? 1.55 12.0+0.3 - 0.1 1.75 5.5 2 0.10 8.0 2 0.10 4.0 2 0.10 2.0 2 0.10 0.30 2 0.013 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15 a a e e1 e2 p0 d0 a0 b0 d1 p1 p2 feeding direction t k0 section a-a 2 0.15 2 0.10 2 0.10 2 0.10 2 0.10 terminal number 1 w 1 n w m g v r h k s ver 1.0

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